Light-Assisted Growth of Hexagonal Au Nanostructures on Sapphire Substrates

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) ind...

Ion-assisted nucleation and growth of GaN on sapphire„0001..

We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire~0001! by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga~C2H5!3 exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx 1 ions and Ga~C2H5!3 exhibited layer-by-layer intensity oscillations with maxim...

Epitaxial growth of unusual 4H hexagonal Ir, Rh, Os, Ru and Cu nanostructures on 4H Au nanoribbons.

Metal nanomaterials normally adopt the same crystal structure as their bulk counterparts. Herein, for the first time, the unusual 4H hexagonal Ir, Rh, Os, Ru and Cu nanostructures have been synthesized on 4H Au nanoribbons (NRBs) via solution-phase epitaxial growth under ambient conditions. Interestingly, the 4H Au NRBs undergo partial phase transformation from 4H to face-centered cubic (fcc) s...

Enhancement of InGaN-Based Light Emitting Diodes Performance Grown on Cone-Shaped Pattern Sapphire Substrates

To enhance light extraction effciency, high-quality InGaN-based light emitting diodes (LED) was grown on cone-shaped patterned sapphire (CPSS) by using metal organic chemical vapor deposition (MOCVD). From the transmission electron microscopy (TEM) observation, the CPSS was confirmed to be an efficient way to reduce the threading dislocation density in the GaN epilayer. A sharp and high intensi...

Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy